CRYSTALLIZATION INVESTIGATION OF NISI₂ THIN FILMSMAENPAA M; HUNG LS; TSAUR BY et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 289-301; BIBL. 15 REF.Article

ALUMINIUM CONTACT TO NICKEL SILICIDE USING A THIN TUNGSTEN BARRIERBARTUR M; NICOLET MA.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 91; NO 2; PP. 89-98; BIBL. 13 REF.Article

Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory applicationCHEN, Wei-Ren; CHANG, Ting-Chang; LIU, Po-Tsun et al.Surface & coatings technology. 2007, Vol 202, Num 4-7, pp 1292-1296, issn 0257-8972, 5 p.Conference Paper

Crystal chemistry of the G-phases in the {Ti, Zr, Hf}-Ni-Si systemsGRYTSIV, A; CHEN, Xing-Qiu; ROGL, P et al.Journal of solid state chemistry (Print). 2007, Vol 180, Num 2, pp 733-741, issn 0022-4596, 9 p.Article

ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIERBARTUR M; NICOLET MA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 822-824; BIBL. 13 REF.Article

ELECTRONIC STRUCTURE OF NICKEL SILICIDES NI₂SI, NISI, AND NISI₂FRANCIOSI A; WEAVER JH; SCHMIDT FA et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 2; PP. 546-553; BIBL. DISSEM.Article

THE INFLUENCE OF SUBSTRATE TEMPERATURE ON THE ORIENTED GROWTH OF NI AND NI₂SI ON SI (111)MATTHEIS R.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 195-205; ABS. GER; BIBL. 10 REF.Article

Influence of catalyst layer thickness on the growth of nickel silicide nanowires and its application for Li-ion batteriesLUND, Isaac N; JAE HO LEE; EFSTATHIADIS, Harry et al.Journal of power sources (Print). 2014, Vol 246, pp 117-123, issn 0378-7753, 7 p.Article

Monolayer resolution in medium-energy ion-scattering experiments on the NiSi₂ (111) surfaceVRIJMOETH, J; ZAGWIJN, P. M; FRENKEN, J. W. M et al.Physical review letters. 1991, Vol 67, Num 9, pp 1134-1137, issn 0031-9007Article

Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)LIEHR, M; SCHMID, P. E; LEGOUES, F. K et al.Physical review letters. 1985, Vol 54, Num 19, pp 2139-2142, issn 0031-9007Article

Utilization of NiSi₂ as an interconnect material for VLSIBARTUR, M; NICOLET, M.-A.IEEE electron device letters. 1984, Vol 5, Num 3, pp 88-90, issn 0741-3106Article

Classification of structures built up of centred trigonal prisms and ordering principles in ternary rare-earth-transition-metal silicide, germanide and gallide structuresPARTHE, E; CHABOT, B; HOVESTREYDT, E et al.Acta crystallographica. Section B, Structural crystallography and crystal chemistry. 1983, Vol 39, Num 5, pp 296-603, issn 0567-7408Article

Effect of alloying elements Mo and W on Ni silicides formationDERAFA, A; TELLOUCHE, G; HOUMMADA, K et al.Microelectronic engineering. 2014, Vol 120, pp 150-156, issn 0167-9317, 7 p.Conference Paper

Effects of Laser in situ annealing on crystal quality of NiSi film grown on Si(001) substrateLI WAN; XUEFEI ZHANG; BO TANG et al.Thin solid films. 2010, Vol 518, Num 14, pp 3646-3649, issn 0040-6090, 4 p.Article

Sputter deposition and XPS analysis of nickel silicide thin filmsTAM, P. L; NYBORG, L.Surface & coatings technology. 2009, Vol 203, Num 19, pp 2886-2890, issn 0257-8972, 5 p.Article

Formation of Ni silicide at room temperature studied by laser atom probe tomography : Nucleation and lateral growthHOUMMADA, K; MANGELINCK, D; CADEL, E et al.Microelectronic engineering. 2007, Vol 84, Num 11, pp 2517-2522, issn 0167-9317, 6 p.Conference Paper

Towards implementation of a nickel silicide process for CMOS technologiesLAVOIE, C; D'HEURLE, F. M; DETAVERNIER, C et al.Microelectronic engineering. 2003, Vol 70, Num 2-4, pp 144-157, issn 0167-9317, 14 p.Conference Paper

Ni-Pt silicide formation through Ti mediating layersBESSER, Paul; LAVOIE, Christian; OZCAN, Ahmet et al.Microelectronic engineering. 2007, Vol 84, Num 11, pp 2511-2516, issn 0167-9317, 6 p.Conference Paper

Corrosion properties of thermally annealed and co-sputtered nickel silicide thin filmsTAM, P. L; CAO, Y; JELVESTAM, U et al.Surface & coatings technology. 2011, Vol 206, Num 6, pp 1160-1167, issn 0257-8972, 8 p.Article

Experimental and theoretical positron annihilation studies on bulk nickel silicidesABHAYA, S; RAJARAMAN, R; AMARENDRA, G et al.Applied surface science. 2008, Vol 255, Num 1, pp 142-144, issn 0169-4332, 3 p.Article

Oxidation of Ni(Pt)Si by molecular vs. atomic oxygenMANANDHAR, Sudha; COPP, Brian; KELBER, J. A et al.Applied surface science. 2008, Vol 254, Num 22, pp 7486-7493, issn 0169-4332, 8 p.Article

A study of Ni₃Si-based composite coating fabricated by self-propagating high temperature synthesis casting routeMUYE NIU; QINLING BI; LINGQIAN KONG et al.Surface & coatings technology. 2011, Vol 205, Num 17-18, pp 4249-4253, issn 0257-8972, 5 p.Article

Silicon-nickel silicide Schottky barriers formed by ion mixingGERASIMENKO, N. N; GERSHINSKII, A. E; SURTAEV, A. YU et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp K151-K154, issn 0031-8965Article

Formation of ultrathin single-crystal silicide films on Si: surface and interfacial stabilization of Si-NiSi₂ epitaxial structuresTUNG, R. T; GIBSON, J. M; POATE, J. M et al.Physical review letters. 1983, Vol 50, Num 6, pp 429-432, issn 0031-9007Article

Metal induced crystallization of amorphous siliconJANG, Jin; SOO YOUNG YOON.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 13-23Conference Paper